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AM2325P

Analog Power
Part Number AM2325P
Manufacturer Analog Power
Description P-Channel MOSFET
Published Oct 8, 2016
Detailed Description Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench pro...
Datasheet PDF File AM2325P PDF File

AM2325P
AM2325P

Overview
Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to pproowveidr elolsoswanrDdS(hoen)aat nddistsoipeantisounre.
minimal Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
AM2325P PRODUCT SUMMARY VDS (V) -20 rDS(on) (OHM) 0.
055 @ VGS = -4.
5V 0.
089 @ VGS = -2.
5V 0.
20 @ VGS = -1.
8V ID (A) -3.
6 -2.
8 -1.
8 • Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe SOT-23 saves board space • Fast switching speed • High performance trench technology G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Ratings Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Currenta Pulsed Drain Currentb TA=25oC TA=70oC ID IDM -3.
6 -2.
9 -10 Continuous Source Current (Diode Conduction)a IS ±0.
46 Power Dissipationa TA=25oC TA=70oC PD 1.
25 0.
8 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol RTHJA Maximum 100 166 Units oC/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature 1 Publication Order Number: DS-AM2325_J Analog Power AM2325P SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf VDS = VGS, ID = -250 uA VDS = 0 V, VGS = ±8 V VDS = -16 V, VGS = 0 V VDS = ...


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