DatasheetsPDF.com

AM2323P

Analog Power
Part Number AM2323P
Manufacturer Analog Power
Description P-Channel 20-V (D-S) MOSFET
Published May 14, 2012
Detailed Description Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench proces...
Datasheet PDF File AM2323P PDF File

AM2323P
AM2323P

Overview
Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• • • • Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology AM2323P PRODUCT SUMMARY VDS (V) rDS(on) (OHM) 0.
100 @ VGS = -4.
5V -20 0.
160 @ VGS = -2.
5V 0.
290 @ VGS = -1.
8V ID (A) -2.
9 -2.
3 -1.
7 G D S ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS -20 V VGS ±12 Gate-Source Voltage www.
DataSheet.
co.
kr o Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM -2.
9 -2.
4 -10 ±1.
6 1.
25 0.
8 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol Maximum Units RΤΗJA 100 166 o C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM2323_C Datasheet pdf - http://www.
DataSheet4U.
net/ Analog Power AM2323P SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current A o Symbol VGS(th) IGSS IDSS ID(on) A Test Conditions VDS = VGS, ID = -250 uA VDS = 0 V, VGS = +/-12 V Min -0.
4 Limits Unit Typ Max ±100 nA uA A VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, T J = 55oC -1 -10 -3 0.
100 0.
160 0.
290 3 -0.
7 6.
0 0.
8 1.
3 6.
5 20 31 21 Drain-Source On-Resistance...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)