DatasheetsPDF.com

AM2322N

Analog Power
Part Number AM2322N
Manufacturer Analog Power
Description N-Channel MOSFET
Published Oct 8, 2016
Detailed Description Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench proces...
Datasheet PDF File AM2322N PDF File

AM2322N
AM2322N

Overview
Analog Power N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
• Low rDS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe SOT-23 saves board space • Fast switching speed • High performance trench technology AM2322N PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 30 0.
085 @ VGS = 10V 0.
125 @ VGS = 4.
5V ID (A) 2.
5 1.
7 G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb VGS TA=25oC TA=70oC ID IDM ±20 2.
5 2 10 Continuous Source Current (Diode Conduction)a IS 0.
46 Power Dissipationa TA=25oC TA=70oC PD 1.
25 0.
8 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W oC THERMAL RESISTANCE RATINGS Parame te r Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol RT HJA Maximum 150 200 Units oC/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AM2322_F Analog Power AM2322N SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Symbol Test Conditions Min VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 uA VDS = 0 V, VGS = 8 V VDS = 16 V, VGS = 0...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)