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AO4422

Alpha & Omega Semiconductors
Part Number AO4422
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Jan 25, 2017
Detailed Description Jan 2003 AO4422 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4422 uses advanced trench ...
Datasheet PDF File AO4422 PDF File

AO4422
AO4422


Overview
Jan 2003 AO4422 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Features VDS (V) = 30V ID = 11A RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 24mΩ (VGS = 4.
5V) SD SD SD GD SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 11 9.
3 50 3 2.
1 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-St...


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