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BUZ102S

Part Number	BUZ102S
Manufacturer	Infineon
Description	Power Transistor
Published	Jan 29, 2017
Detailed Description	BUZ 102S SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated Product Summary Drain sou...
Datasheet	BUZ102S PDF File

Overview

BUZ 102S SIPMOS Power Transistor Features • N channel • Enhancement mode • Avalanche rated Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current • dv/dt rated • 175 ˚C operating temperature VDS RDS(on) ID 55 0.
018 52 V Ω A Type BUZ102S BUZ102S E3045A BUZ102S E3045 Package Ordering Code P-TO220-3-1 Q67040-S4011-A2 P-TO263-3-2 Q67040-S4011-A6 P-TO263-3-2 Q67040-S4011-A5 Packaging Tube Tape and Reel Tube Pin 1 Pin 2 Pin 3 GDS Maximum Ratings, at Tj = 25 ˚C unless unless specified Parameter Symbol Continuous drain current TC = 25 ˚C TC = 100 ˚C ID Pulsed drain current TC = 25 ˚C Avalanche energy, single pulse ID = 52 A, VDD = 25 V, RGS ...

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