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BUZ103

Siemens Semiconductor Group
Part Number BUZ103
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 103 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • ...
Datasheet PDF File BUZ103 PDF File

BUZ103
BUZ103

Overview
BUZ 103 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 G Type BUZ 103 Pin 2 D Pin 3 S VDS 50 V ID 40 A RDS(on) 0.
04 Ω Package TO-220 AB Ordering Code C67078-S1352-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 40 Unit A ID IDpuls 160 TC = 23 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 100 dv/dt 6 mJ ID = 40 A, VDD = 25 V, RGS = 25 Ω L = 63 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 40 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation VGS Ptot ± 20 120 V W TC = 25...


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