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BUZ31

Infineon Technologies AG
Part Number BUZ31
Manufacturer Infineon Technologies AG
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 31 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type ...
Datasheet PDF File BUZ31 PDF File

BUZ31
BUZ31

Overview
BUZ 31 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 31 200 V 14.
5 A 0.
2 Ω TO-220 AB C67078-S.
1304-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 14.
5 A TC = 30 ˚C Pulsed drain current IDpuls 58 TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 14.
5 9 mJ ID = 14.
5 A, VDD = 50 V, RGS = 25 Ω L = 1.
42 mH, Tj = 25 ˚C Gate source voltage Power dissipation 200 VGS Ptot ± 20 95 V W TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 .
.
.
+ 150 -55 .
.
.
+ 150 ˚C ≤ 1.
32 75 E 55 / 150 / 56 K/W Data Sheet 1 05.
99 BUZ 31 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Par...


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