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BUZ72

Siemens Semiconductor Group
Part Number BUZ72
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 72 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ...
Datasheet PDF File BUZ72 PDF File

BUZ72
BUZ72

Overview
BUZ 72 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 72 VDS 100 V ID 10 A RDS(on) 0.
2 Ω Package TO-220 AB Ordering Code C67078-S1313-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 10 Unit A ID IDpuls 40 TC = 25 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 10 7.
9 mJ ID = 10 A, VDD = 25 V, RGS = 25 Ω L = 885 µH, Tj = 25 °C Gate source voltage Power dissipation 59 VGS Ptot ± 20 40 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 .
.
.
+ 150 -55 .
.
.
+ 150 ≤ 3.
1 75 E 55 / 150 / 56 °C K/W 1 07/96 BUZ 72 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol mi...


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