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BUZ76

Siemens Semiconductor Group
Part Number BUZ76
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 76 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ...
Datasheet PDF File BUZ76 PDF File

BUZ76
BUZ76

Overview
BUZ 76 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 76 VDS 400 V ID 3A RDS(on) 1.
8 Ω Package TO-220 AB Ordering Code C67078-S1315-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 3 Unit A ID IDpuls 12 TC = 37 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 3 5 mJ ID = 3 A, VDD = 50 V, RGS = 25 Ω L = 35 mH, Tj = 25 °C Gate source voltage Power dissipation 180 VGS Ptot ± 20 40 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chi...


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