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BSN274

NXP
Part Number BSN274
Manufacturer NXP
Description N-channel Transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BSN274; BSN274A N-channel enhancement mode vertical D-MOS transistor Product specifi...
Datasheet PDF File BSN274 PDF File

BSN274
BSN274

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BSN274; BSN274A N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc.
, due to low threshold voltage • High speed switching • No secondary breakdown DESCRIPTION Silicon n-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high speed and line transformer drivers.
QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage drain current (DC) drain-source on-resistance threshold voltage BSN274; BSN274A MAX.
270 250 8 2 V UNIT mA Ω V PINNING (BSN274) PIN 1 2 3 gate drain source DESCRIPTION PINNING (BSN274A) PIN 1 2 3 gate drain DESCRIPTION source Note: Other pinnings are available on request.
PIN CONFIGURATION - TO-92 VARIANT handbook, halfpage d 1 2 3 g MAM146 s Fig.
1 Simplified outline and symbol.
April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS ±VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current drain current total power dissipation storage temperature range operating junction temperature open drain DC peak up to Tamb = 25 °C (note 1) CONDITIONS BSN274; BSN274A MIN.
− − − − − −65 − MAX.
270 20 250 1 1 150 150 V V UNIT mA A W °C °C THERMAL RESISTANCE SYMBOL Rth j-a Notes 1.
Transistor mounted on printed circuit board, maximum lead length 4 mm, mounting pad for drain leads minimum 10 mm × 10 mm.
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL V(BR)DSS IDSS ±IGSS VGS(th) RDS(on) RDS(on)  Yfs  Ciss PARAMETER drain-source breakdown voltage drain-source lea...


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