DatasheetsPDF.com

BSO307N

Infineon Technologies AG
Part Number BSO307N
Manufacturer Infineon Technologies AG
Description SIPMOS Small-Signal-Transistor
Published Mar 23, 2005
Detailed Description Preliminary Data SIPMOS  Small-Signal-Transistor Features • Dual N channel • BSO 307N Product Summary Drain source vo...
Datasheet PDF File BSO307N PDF File

BSO307N
BSO307N

Overview
Preliminary Data SIPMOS  Small-Signal-Transistor Features • Dual N channel • BSO 307N Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 30 0.
05 5 V Ω A Enhancement mode • Avalanche rated • Logic Level • dv/dt rated Type BSO 307 N Parameter Continuous drain current, one channel active Package SO 8 Symbol Ordering Code Q67000-S4012 Value 5 20 55 5 0.
2 6 mJ A mJ kV/µs Unit A Maximum Ratings, at T j = 25 ˚C, unless otherwise specified ID IDpulse EAS IAR EAR dv/dt T A = 25 ˚C Pulsed drain current, one channel active T A = 25 ˚C Avalanche energy, single pulse I D = 5 A, VDD = 25 V, R GS = 25 Ω Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = 5 A, V DS = 24 V, di/dt = 200 A/µs, T jmax = 150 ˚C Gate source voltage Power dissipation, one channel active VGS Ptot Tj Tstg ±20 2 -55.
.
.
+150 -55 .
.
.
+150 55/150/56 V W ˚C T A = 25 ˚C Operating temperature S...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)