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BSP206

NXP
Part Number BSP206
Manufacturer NXP
Description P-channel enhancement mode vertical D-MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BSP206 P-channel enhancement mode vertical D-MOS transistor Product specification Fi...
Datasheet PDF File BSP206 PDF File

BSP206
BSP206

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BSP206 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13B April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.
FEATURES • Very low RDS(on) • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No secondary breakdown PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain Marking code BSP206 PIN CONFIGURATION QUICK REFERENCE DATA Drain-source voltage Drain current (DC) Drain-source ON-resistance −ID = 200 mA; −VGS = 10 V Gate threshold voltage −VDS −ID RDS(on) −VGS(th) max.
max.
max.
max.
BSP206 60 V 350 mA 6 Ω 3.
5 V handbook, halfpage 4 d g 1 Top view 2 3 MAM121 s Fig.
1 Simplfied outline and symbol.
April 1995 2 Philips Semiconductors Produc...


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