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BSP230

NXP
Part Number BSP230
Manufacturer NXP
Description P-channel enhancement mode vertical D-MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BSP230 P-channel enhancement mode vertical D-MOS transistor Product specification Su...
Datasheet PDF File BSP230 PDF File

BSP230
BSP230

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BSP230 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 17 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No secondary breakdown.
APPLICATIONS • Line current interruptor in telephone sets • Relay, high speed and line transformer drivers.
DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package.
PINNING - SOT223 PIN 1 2 3 4 SYMBOL g d s d DESCRIPTION gate drain source drain CAUTION 1 Top view handbook, halfpage BSP230 4 d g s 2 3 MAM121 Fig.
1 Simplified outline and symbol.
The device is supplied in an antistatic package.
The gate-source input must be protected against static discharge during transport or handling.
QUICK REFERENCE DATA SYMBOL VDS VGSO VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation ID = −170 mA; VGS = −10 V Tamb ≤ 25 °C open drain ID = −1 mA; VDS = VGS CONDITIONS − − −1.
7 − − − MIN.
MAX.
−300 ±20 −2.
55 −210 17 1.
5 V V V mA Ω W UNIT 1997 Jun 17 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VDS VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature Tamb ≤ 25 °C; note 1 open drain CONDITIONS − − − − − −65 − MIN.
BSP230 MAX.
−300 ±20 −210 −0.
75 1.
5 +150 150 V V UNIT mA A W °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 83.
3 UNIT K/W Note to the...


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