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BSP225

NXP
Part Number BSP225
Manufacturer NXP
Description P-channel enhancement mode vertical D-MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BSP225 P-channel enhancement mode vertical D-MOS transistor Product specification Fi...
Datasheet PDF File BSP225 PDF File

BSP225
BSP225

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BSP225 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES • Low RDS(on) • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No secondary breakdown.
DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope, intended for use in relay, high-speed and line transformer drivers.
PINNING - SOT223 PIN 1 2 3 4 gate drain source drain 1 Top view 2 3 MAM121 BSP225 QUICK REFERENCE DATA SYMBOL −VDS −ID RDS(on) −VGS(th) PARAMETER drain-source voltage drain current drain-source on-resistance gate-source threshold voltage DC value −ID = 200 mA −VGS = 10 V −ID = 1 mA VGS = VDS CONDITIONS MAX.
250 225 15 2.
8 UNIT V mA Ω V PIN CONFIGURATION handbook, halfpage 4 d DESCRIPTION g s Fig.
1 Simplified outline and symbol.
April 1995 ...


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