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BS208

NXP
Part Number BS208
Manufacturer NXP
Description P-channel enhancement mode vertical D-MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BS208 P-channel enhancement mode vertical D-MOS transistor Product specification Fil...
Datasheet PDF File BS208 PDF File

BS208
BS208

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BS208 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS • High-speed switching • No secondary breakdown.
DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope.
Intended for use in relay, high-speed and line transformer drivers.
PINNING - TO-92 PIN 1 2 3 DESCRIPTION source gate drain MAM149 BS208 handbook, halfpage 1 d 2 3 g s Fig.
1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL VDS VGSO  Yfs  ID RDS(on) Ptot PARAMETER drain-source voltage (DC) gate-source voltage (DC) forward transfer admittance drain current (DC) drain-source on-state resistance VGS = −10 V; ID = −200 mA total power dissipation Tamb = 25 °C open drain ID = −200 mA; VDS = −25 V CONDITIONS − − 100 − − − MIN.
− − 200 − 10 − TYP.
MAX.
−200 ±20 − −0.
2 14 0.
83 V V mS A Ω W UNIT April 1995 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134) SYMBOL −VDS ±VGSO −ID −IDM Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current drain current total power dissipation storage temperature range junction temperature open drain DC peak value Tamb = 25 °C CONDITIONS MIN.
− − − − − −65 − MAX.
200 20 0.
2 0.
6 BS208 UNIT V V A A W °C °C 0.
83 +150 150 THERMAL RESISTANCE SYMBOL Rthj-a PARAMETER from junction to ambient MAX.
150 K/W UNIT handbook, 1 MDA690 Ptot (W) 0.
8 0.
6 0.
4 0.
2 0 0 50 100 150 200 Tamb (°C) Fig.
2 Power derating curve.
April 1995 3 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL −V(BR)DSS −IDSS −IDSS −IGSS −VGS(th) RDS(on)  Yfs  Ciss Coss...


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