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BS209

General Semiconductor
Part Number BS209
Manufacturer General Semiconductor
Description DMOS Transistors (P-Channel)
Published Mar 23, 2005
Detailed Description BS209 DMOS Transistors (P-Channel) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Hig...
Datasheet PDF File BS209 PDF File

BS209
BS209

Overview
BS209 DMOS Transistors (P-Channel) TO-92 .
181 (4.
6) min.
.
492 (12.
5) .
181 (4.
6) .
142 (3.
6) FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown max.
∅ .
022 (0.
55) .
098 (2.
5) D G S MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx.
0.
18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage (pulsed) Drain Current (continuous) at Tamb = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 400 400 ±20 120 8301) 150 –65 to +150 Unit V V V mA mW °C °C –VDSS –VDGS VGS –ID Ptot Tj TS Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Inverse Diode Symbol Max.
Forward Current (continuous) at Tamb = 25 °C Forward Voltage Drop (typ.
) at VGS = 0 V, IF = 400 mA, Tj = 25 °C IF VF Value 400 1.
0 Unit mA V 4/98 BS209 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Breakdown Voltage at –ID = 100 µA, VGS = 0 V Gate-Body Leakage Current, Forward at –VGSF = 20 V, VDS = 0 V Gate-Body Leakage Current, Reverse at –VGSR = 20 V, VDS = 0 V Drain Cutoff Current at –VDS = 400 V, VGS = 0 V Gate-Source Threshold Voltage at VGS = VDS, –ID = 250 µA Drain-Source ON Resistance at –VGS = 5 V, –ID = 120 mA Capacitance at –VDS = 25 V, VGS = 0, f = 1 MHz Input Capacitance Output Capacitance Feedback Capacitance Switching Times at –VGS = 10 V, –VDS = 10 V, RD = 100 Ω Turn-On Time Turn-Off Time Thermal Resistance Junction to Ambient Air 1) Min.
400 – – – 1 – Typ.
430 – – – 1.
5 50 Max.
– 100 100 500 2.
5 60 Unit V nA nA nA V Ω –V(BR)DSS –IGSSF –IGSSR –IDSS –VGS(th) RDS(on) CiSS COSS CrSS – – – 200 30 ...


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