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BS208

Diodes Incorporated
Part Number BS208
Manufacturer Diodes Incorporated
Description P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
Published Mar 23, 2005
Detailed Description BS208 P–CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features · · · · · High Breakdown Voltage High Input Impedance Fast Swi...
Datasheet PDF File BS208 PDF File

BS208
BS208

Overview
BS208 P–CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features · · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets E A B TO-92 Dim A B C Min 4.
45 4.
46 12.
7 0.
41 3.
43 2.
42 1.
14 Max 4.
70 4.
70 — 0.
63 3.
68 2.
67 1.
40 Mechanical Data · · · · Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Weight: 0.
18 grams (approx.
) D BOTTOM VIEW C D E G H SG D All Dimensions in mm H G H Maximum Ratings Drain-Source-Voltage Drain-Gate-Voltage @ TA = 25°C unless otherwise specified Symbol -VDSS -VDGS VGS -ID Pd Tj, TSTG Value 240 200 ±20 200 830 –55 to +150 Unit V V V mA mW °C Characteristic Gate-Source-Voltage (pulsed) (Note 2) Drain-Current (continuous) Power Dissipation @TC = 25°C (Note 1) Operating and Storage Temperature Range Inverse Diode @ TA = 25°C unless otherwise specified Characteristic Symbol IF VF Value 0.
22 0.
85 Unit A V Maximum Forward Current (continuous) Forward Voltage Drop (Typical) @ VGS = 0, IF = 0.
75A, Tj = 25°C Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Drain-Source Breakdown Voltage Gate-Body Leakage Current Drain-Source Cutoff Current Gate-Source Threshold Voltage Drain-Source ON Resistance Thermal Resistance Junction to Ambient Input Capacitance Output Capacitance Feedback Capacitance Notes: Symbol -V(BR)DSS -IGSS -IDSS -IDSX -VGS(th) rDS(ON) RqJA Ciss Coss Crss Min 200 — — — — — — Typ 230 — — 2.
8 7.
0 — 270 35 6.
0 Max — 10 1.
0 25 4.
0 14 150 — Unit V nA µA V W K/W pF Test Condition -ID = 100µA, VGS = 0 -VGS = 15V, VDS = 0 -VDS =130V, VGS = 0 -VDS = 10V, -VGS = 0.
2V VGS = VDS, -ID = 1.
0mA -VGS = 10V, -ID = 100 mA Note 1 -VDS = 20V, VGS= 0, f =1.
0MHz 1.
Valid provided that leads are kept at ambient temperature at a distance of 2.
0mm from case.
2.
Pulse Test: Pulse width = 80µs, duty factor = 1%.
DS21901 Rev.
E-3 1 of 2 BS208 1 2.
0 -ID (ON), DRAIN ON-CURRENT (A) See Note 2 ...


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