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BS208

General Semiconductor
Part Number BS208
Manufacturer General Semiconductor
Description DMOS Transistors (P-Channel)
Published Mar 23, 2005
Detailed Description BS208 DMOS Transistors (P-Channel) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦...
Datasheet PDF File BS208 PDF File

BS208
BS208

Overview
BS208 DMOS Transistors (P-Channel) TO-92 .
181 (4.
6) min.
.
492 (12.
5) .
181 (4.
6) .
142 (3.
6) FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Specially suited for telephone subsets max.
∅ .
022 (0.
55) .
098 (2.
5) D G S MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx.
0.
18 g On special request, this transistor is also manufactured in the pin configuration TO-18.
Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage (pulsed) Drain Current (continuous) Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 240 240 ± 20 200 0.
831) 150 –65 to +150 Unit V V V mA W °C °C –VDSS –VDGS VGS –ID Ptot Tj TS Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
Inverse Diode Symbol Max.
Forward Current (continuous) at Tamb = 25 °C Forward Voltage Drop (typ.
) at VGS = 0, IF = 0.
75 A, Tj = 25 °C IF VF Value 0.
75 0.
85 Unit A V 4/98 BS208 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Breakdown Voltage at –ID = 100 µA, VGS = 0 Gate-Body Leakage Current at –VGS = 15 V, VDS = 0 Drain Cutoff Current at –VDS = 130 V, VGS = 0 at –VDS = 70 V, –VGS = 0.
2 V Gate-Source Threshold Voltage at VGS = VDS, –ID = 1 mA Drain-Source ON Resistance at –VGS = 5 V, –ID = 100 mA Thermal Resistance Junction to Ambient Air Capacitances at –VDS = 20 V, VGS = 0, f = 1 MHz Input Capacitance Output Capacitance Feedback Capacitance Switching Times at –ID = 200 mA, –UGS = 10 V Turn-on Time Fall Time 1) Min.
240 – Typ.
250 – Max.
– 10 Unit V nA –V(BR)DSS –IGSS –IDSS –IDSX –VGS(th) RDS(ON) Rth...


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