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ME60N04

Matsuki
Part Number ME60N04
Manufacturer Matsuki
Description N-Channel MOSFET
Published Mar 27, 2015
Detailed Description N- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME60N04 is the N-Channel logic enhancement mode power field effect ...
Datasheet PDF File ME60N04 PDF File

ME60N04
ME60N04

Overview
N- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME60N04 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss.
ME60N04 FEATURES ● RDS(ON)≦12mΩ@VGS=10V ● RDS(ON)≦17mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● LCD TV & Monitor Display inverter ● CCFL inverter ● Secondary Synchronous Rectification PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Tj=150℃,limited by package) TC=25℃ TA=25℃ Pulsed Drain Current Avalanche Energy with Single Pulse(L=1mH) Maximum Power Dissipation TC=25℃ (Note A) TA=25℃ Operating Junction Temperature Thermal Resistance-Junction to Ambient(Note A) Thermal Resistance-Junction to Case(Note A) Symbol VDSS VGSS ID IDM EAS PD TJ RθJA RθJC Steady 40 ±20 20 12 50 40 30 3 -55 to 150 42 4.
3 Note A: The device mounted on 1in2 FR4 board with 2 oz copper July, 2008-Ver4.
0 Unit V V A A mJ W ℃ ℃/W ℃/W 01 N- Channel 40-V (D-S) MOSFET Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol Parameter STATIC Conditions V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA IGSS Gate Leakage Current VDS=0V, VGS=±20V IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V RDS(ON) Drain-Source On-State Resistancea VGS=10V, ID= 15A VGS=4.
5V, ID= 13A VSD Diode Forward Voltage DYNAMIC Qg (TOT) Total Gate Charge, VGS=10V IS=15A, VGS=0V Qg Total Gate Charge, VGS=4.
5V Qgs Gat...


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