DatasheetsPDF.com

BFP93

Siemens Semiconductor Group
Part Number BFP93
Manufacturer Siemens Semiconductor Group
Description NPN Silicon RF Transistor
Published Mar 23, 2005
Detailed Description BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector curr...
Datasheet PDF File BFP93 PDF File

BFP93
BFP93

Overview
BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 93A FEs Q62702-F1144 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 50 6 mW 300 150 - 65 .
.
.
+ 150 - 65 .
.
.
+ 150 ≤ 240 °C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS ≤ 78 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group 1 Dec-16-1996 BFP 93A Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol min.
DC Characteristics Collector-emitter breakdown voltage Values typ.
max.
Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 10 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V Semiconductor Group 2 Dec-16-1996 BFP 93A Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol min.
AC Characteristics Transition frequency Values typ.
max.
Unit fT 4.
5 6 0.
5 0.
33 1.
7 - GHz pF 0.
8 dB 2 3.
3 - IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.
5 V, f = 1 MHz Noise figure F IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.
8 GHz Power gain 2) Gma IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.
8 GHz Transducer gain |S21e|2 14.
5 8.
5 18 12 - IC ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)