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2SD2118

Part Number	2SD2118
Manufacturer	JCST
Description	NPN Transistor
Published	May 17, 2018
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 2SD2118 TRANSISTOR (NPN) ...
Datasheet	2SD2118 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-251-3L Plastic-Encapsulate Transistors 2SD2118 TRANSISTOR (NPN) FEATURES z Low VCE(sat).
VCE(sat) = 0.
25V (Typ.
)(IC/IB = 4A / 0.
1A) z Excellent DC Current Gain Characteristics.
TO-251-3L 1.
BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2.
COLLECTOR Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 50 20 6 5 1 150 -55-150 Unit V V V A W ℃ ℃ 3.
EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage ...

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