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BCP56

Fairchild Semiconductor
Part Number BCP56
Manufacturer Fairchild Semiconductor
Description NPN General Purpose Amplifier
Published Mar 23, 2005
Detailed Description BCP56 BCP56 C E B C SOT-223 NPN General Purpose Amplifier These devices are designed for general purpose medium pow...
Datasheet PDF File BCP56 PDF File

BCP56
BCP56

Overview
BCP56 BCP56 C E B C SOT-223 NPN General Purpose Amplifier These devices are designed for general purpose medium power amplifiers and switches requiring collector currents to 1A.
Sourced from Process 39.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted BCP56 80 100 5 1.
2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics Symbol TA = 25°C unless otherwise noted Max Characteristic BCP56 PD RθJA Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient 1 8 125 W mW/°C °C/W Units *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.
5 mm; mounting pad for the collector lead min.
6 cm2.
©1998 Fairchild Semiconductor Corporation Pr3947_REV A BCP56 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA IC = 100 µA IE = 10 µA VCB = 30 V VCB = 30 V, Tj= +125°C IEBO Emitter Cutoff Current VEB = 5V 80 100 5 100 10 10 V V V nA uA µA ON CHARACTERISTICS* hFE DC Current Gain IC = 5 mA, VCE = 2V IC = 150 mA, VCE = 2V IC = 500mA, VCE = 2 V VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC = 500 m A, IB = 50 mA IC = 500 m A, VCE = 2 V 25 40 25 250 0.
5 1 V V *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.
0% Pr3947_REV A S...


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