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BUZ76

STMicroelectronics
Part Number BUZ76
Manufacturer STMicroelectronics
Description N-Channel MOSFET
Published Jan 3, 2019
Detailed Description BUZ76 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ76 Voss 400 V RoS(on) 1.80 10 3A • HIGH VOLTAGE - F...
Datasheet PDF File BUZ76 PDF File

BUZ76
BUZ76


Overview
BUZ76 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ76 Voss 400 V RoS(on) 1.
80 10 3A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • ELECTRONIC LAMP BALLAST • DC SWITCH N - channel enhancement mode POWER MaS field effect transistor.
Easy drive and very fast switching times make this POWER MaS transistor ideal for high speed switching applications.
Applications include off-line use, constant current source, ultrasonic equipment and switching power supply start-up circuits.
, TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Vos VOGR VGS 10 10M Ptot Tstg Tj Drain-source voltage (VGS =0) Drain-gate voltage (RGS =20 KO) Gate-source voltage Drain current (continuous) Tc =35°C Drain current (pulsed) Total dissipation at Tc <25°C Storage temperature Max.
operating junction temperature DIN humidity category (DIN 40040) IEC climatic category (DIN IEC 68-1) June 1988 ...



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