DatasheetsPDF.com

SPN8644

SYNC POWER
Part Number SPN8644
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Jan 7, 2019
Detailed Description SPN8644 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8644 is the N-Channel logic enhancement mode power field e...
Datasheet PDF File SPN8644 PDF File

SPN8644
SPN8644

Overview
SPN8644 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8644 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES  45V/52A,RDS(ON)=9.
5mΩ@VGS=10V  45V/52A,RDS(ON)=14mΩ@VGS=4.
5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  PPAK3x3-8L package design APPLICATIONS  MB/VGA/Vcore  POL Applications  SMPS 2nd SR  Charger Adapter  LED Lighting  Load Switch PIN CONFIGURATION(PPAK3x3-8L) PART MARKING 2020/05/28 Ver 2 Page 1 SPN8644 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN8644DN8RGB PPAK3x3-8L ※ SPN8644DN8RGB : 13” Tape Reel ; Pb – Free; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(Silicon Limited) Pulsed Drain Current Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=100℃ TA=25℃ Symbol VDSS VGSS ID IDM PD TJ TSTG RθJA Part Marking SPN8644 Typical 45 ±20 52 33 120 7 -55/150 -55/150 62 Unit V V A A W ℃ ℃ ℃/W 2020/05/28 Ver 2 Page 2 SPN8644 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min.
Typ Max.
Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Gate Resistance Diode Forward Voltage Dynamic Total Gate Ch...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)