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SPN8620

SYNC POWER
Part Number SPN8620
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Sep 28, 2023
Detailed Description SPN8620 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8620 is a dual N-Channel logic enhancement mode power fiel...
Datasheet PDF File SPN8620 PDF File

SPN8620
SPN8620

Overview
SPN8620 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8620 is a dual N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.
The SPN8620 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS  Powered System  DC/DC Converter  Load Switch FEATURES  20V/4A, RDS(ON)=12mΩ@VGS=10V  High density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  PPAK3x3-8L package design PIN CONFIGURATION (PPAK3x3-8L) PART MARKING 2023/09/28 Ver 1 Page 1 SPN8620 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source Gate Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN8620DN8RGB PPAK3x3-8L ※ SPN8620DN8RGB : Tape Reel ; Pb – Free ; Halogen - Free Part Marking SPN8620 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current* Pulsed Drain Current Power Dissipation @ TC=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient *Limited by the package.
TC=25℃ TC=70℃ Symbol VDSS VGSS ID IDM PD TJ TSTG RθJC Typical 20 ±12 25 19 100 26 150 -55/150 4.
8 Unit V V A A W ℃ ℃ ℃ /W 2023/09/28 Ver 1 Page 2 SPN8620 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Gate resistance Diode Forward Voltage V(BR)DSS VGS=0V, ID=250uA VGS(th) VDS=VGS, ID=250uA IGSS VDS=0V,VGS=±12V VDS=16V,VGS=0V IDSS VDS=16V,...


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