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SPN8618

SYNC POWER
Part Number SPN8618
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Apr 10, 2019
Detailed Description SPN8618 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8618 is the N-Channel logic enhancement mode power field e...
Datasheet PDF File SPN8618 PDF File

SPN8618
SPN8618

Overview
SPN8618 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8618 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.
The SPN8618 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS  Powered System  DC/DC Converter  Load Switch FEATURES  100V/10A, RDS(ON)=112mΩ@VGS=10V  100V/10A, RDS(ON)=130mΩ@VGS=4.
5V  High density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  PPAK3x3-8L package design PIN CONFIGURATION (PPAK3x3-8L) PART MARKING 2020/05/28 Ver 2 Page 1 SPN8618 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN8618DN8RGB PPAK3x3-8L ※ SPN8618DN8RGB : Tape Reel ; Pb – Free ; Halogen - Free Part Marking SPN8618 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Power Dissipation @ TA=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TC=25℃ TC=70℃ Symbol VDSS VGSS ID IDM PD TJ TSTG RθJA Typical 100 ±20 12 7.
7 15 2.
3 150 -55/150 62 Unit V V A A W ℃ ℃ ℃/W 2020/05/28 Ver 2 Page 2 SPN8618 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±20V VDS=80V,VGS=0V IDSS VDS=80V,VGS=0V TJ=55℃ ID(on) VDS≥5V,VGS=10V VGS=...


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