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SPN8636

SYNC POWER
Part Number SPN8636
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Apr 10, 2019
Detailed Description SPN8636 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8636 is the N-Channel logic enhancement mode power field e...
Datasheet PDF File SPN8636 PDF File

SPN8636
SPN8636

Overview
SPN8636 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8636 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
The SPN8836 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS  High Frequency Synchronous Buck Converter  DC/DC Power System  Load Switch FEATURES  30V/80A,RDS(ON)=6.
0mΩ@VGS=10V  30V/80A,RDS(ON)=9.
0mΩ@VGS=4.
5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  PPAK3x3-8L package design PIN CONFIGURATION PPAK3x3-8L PART MARKING 2020/05/28 Ver 2 Page 1 SPN8636 N-Channel Enhancement Mode MOSFET PPAK3x3-8L PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN8636DN8RGB PPAK3x3-8L ※ SPN8636DN8RGB : Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(Silicon Limited) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Case TC=25℃ TC=100℃ TC=25℃ Part Marking SPN8636 Symbol VDSS VGSS ID IDM IAS EAS PD TJ TSTG RθJC Typical 30 ±20 80 57 160 50 180 83 150 -55/150 1.
5 Unit V V A A A mJ W ℃ ℃ ℃/W 2020/05/28 Ver 2 Page 2 SPN8636 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Dio...


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