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SPN8638

SYNC POWER
Part Number SPN8638
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Apr 10, 2019
Detailed Description SPN8638 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8638 is the N-Channel logic enhancement mode power field e...
Datasheet PDF File SPN8638 PDF File

SPN8638
SPN8638

Overview
SPN8638 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8638 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
The SPN8638 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS  High Frequency Synchronous Buck Converter  DC/DC Power System  Load Switch FEATURES PIN CONFIGURATION(PPAK3x3-8L)  30V/51A,RDS(ON)=9mΩ@VGS=10V  30V/51A,RDS(ON)=13mΩ@VGS=4.
5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  PPAK3x3-8L package design PART MARKING 2020/05/28 Ver 2 Page 1 SPN8638 N-Channel Enhancement Mode MOSFET PPAK3x3-8L PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN8638DN8RGB PPAK3x3-8L ※ SPN8638DN8RGB : Tape Reel ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage TC=25℃ Continuous Drain Current (Silicon Limited) TC=100℃ Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Power Dissipation TC=25℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient (t≦10s) Part Marking SPN8638 Symbol VDSS VGSS ID IDM IAS EAS PD TJ TSTG RθJA Typical 30 ±20 51 36 60 34 130 7 150 -55/150 62 Unit V V A A A mJ W ℃ ℃ ℃/W 2020/05/28 Ver 2 Page 2 SPN8638 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transcon...


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