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SI4435DY

Kexin
Part Number SI4435DY
Manufacturer Kexin
Description P-Channel MOSFET
Published Feb 22, 2020
Detailed Description SSMMDD TTyyppee ■ Features ● VDS=-30V ● RDS(on)=0.02Ω@VGS=-10V ● RDS(on)=0.035Ω@VGS=-4.5V P-Channel MOSFET SI4435DY (KI...
Datasheet PDF File SI4435DY PDF File

SI4435DY
SI4435DY


Overview
SSMMDD TTyyppee ■ Features ● VDS=-30V ● RDS(on)=0.
02Ω@VGS=-10V ● RDS(on)=0.
035Ω@VGS=-4.
5V P-Channel MOSFET SI4435DY (KI4435DY) SOP-8 MOSFET 1.
50 0.
15 +0.
040.
21 -0.
02 S G D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ, Tstg S1 S2 S3 G4 Top View Rating -30 ±20 -8.
8 -50 2.
5 50 -55 to 150 Unit V V A A W ℃/W ℃ 8D 7D 6D 5D www.
kexin.
com.
cn 1 SSMMDD TTyyppee SI4435DY (KI4435DY) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Drain–Source Breakdown Voltage BVDSS VGS = 0 V, ID = –250 μA Zero Gate Voltage Drain Current IDSS VDS = -30V , VGS = 0V VDS = -15V , VGS = 0V , TJ =70℃ Gate Threshold Voltage VGS(th) VDS = VGS , ID = -250uA Gate-Body Leakage IGSS VDS = 0V , VGS = ±20V Drain-Source On-State Resistance * VGS = -10V ,...



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