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SI4435DY

Fairchild Semiconductor
Part Number SI4435DY
Manufacturer Fairchild Semiconductor
Description 30V P-Channel MOSFET
Published Apr 1, 2020
Detailed Description SI4435DY December 2018 SI4435DY 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugg...
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SI4435DY
SI4435DY

Overview
SI4435DY December 2018 SI4435DY 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.
It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.
5V – 25V).
Applications • Power management • Load switch • Battery protection Features • –8.
8 A, –30 V RDS(ON) = 20 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.
5 V • Low gate charge (17nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) TJ, TSTG (Note 1c) Operating and Storage Junction Temperature Range Therma...


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