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30H80

FNK
Part Number 30H80
Manufacturer FNK
Description N-Channel Enhancement Mode MOSFET
Published Mar 4, 2020
Detailed Description 30H80/30H80A N-Channel Enhancement Mode MOSFET Features • 30H80 (TO-220) / 30H80A (TO-262) • 30V/80A, RDS(ON)=7.5mΩ ( ...
Datasheet PDF File 30H80 PDF File

30H80
30H80

Overview
30H80/30H80A N-Channel Enhancement Mode MOSFET Features • 30H80 (TO-220) / 30H80A (TO-262) • 30V/80A, RDS(ON)=7.
5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) @ VGS=4.
5V • Super High Dense Cell Design • Reliable and Rugged • Avalanche Rated • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Desktop Computer or DC/DC Converters.
D G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy, L=0.
5mH Note * Current limited by bond wire.
www.
fnk-tech.
com 1 TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C Rating Unit 30 ±20 150 -55 to 150 80 160 90 80* 48 50 20 2.
5 50 225 V °C °C A A A W °C/W °C/W mJ 0752-7777359 Electrical Characteristics (TA = 25°C Unless Otherwise Noted) Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA VDS=20V, VGS=0V IDSS Zero Gate Voltage Drain Current TJ=85°C VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA IGSS Gate Leakage Current VGS=±20V, VDS=0V RDS(ON) a Drain-Source On-state Resistance VGS=10V, IDS=40A VGS=4.
5V, IDS=20A Diode Characteristics VSDa Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=40A, VGS=0V IDS=40A, dlSD/dt=100A/µs 30H80(A) Min.
Typ.
Max.
30 - - - -1 - - 30 1.
0 1.
4 1.
7 - - ±100 - 5.
5 7.
5 - 7.
2 10 - 0.
85 1.
1 - 25 - 10 - Unit V µA V nA mΩ V ns nC Electrical Characteristics (Cont.
) (TA = 25°C Unless Otherwise Noted) Symbol Parameter Test Conditions Dynamic Characteristics b RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Rever...


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