DatasheetsPDF.com

FDC6333C

On Semiconductor
Part Number FDC6333C
Manufacturer On Semiconductor
Description N- & P-Channel Power MOSFET
Published Mar 22, 2020
Detailed Description MOSFET – N & P-Channel, POWERTRENCH) 30 V FDC6333C General Description These N & P−Channel MOSFETs are produced using on...
Datasheet PDF File FDC6333C PDF File

FDC6333C
FDC6333C


Overview
MOSFET – N & P-Channel, POWERTRENCH) 30 V FDC6333C General Description These N & P−Channel MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical.
Features • Q1 2.
5 A, 30 V ♦ RDS(on) = 95 mW @ VGS = 10 V ♦ RDS(on) = 150 mW @ VGS = 4.
5 V • Q2 −2.
0 A, −30 V ♦ RDS(on) = 130 mW @ VGS = −10 V ♦ RDS(on) = 220 mW @ VGS = −4.
5 V • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOTt−6 Package: Small Footprint (72% Smaller than SO−8); Low Profile (1 mm Thick) • This is a Pb−Free Device Applications • DC−DC Converter • Load Switch • LCD Display Inverter DATA SHEET www.
onsemi.
com VDSS RDS(ON) MAX ID MAX Q1 30 V 95 mW @ 10 V 2.
5 A 150 mW @ 4.
5 V Q2 −30 V 130 mW @ −10 V −2.
0 A 220 mW @ −4.
5 V Pin 1 TSOT−23−6 CASE 419BL MARKING DIAGRAM 333 MG G 1 333 = Specific Device Code M = Assembly Operation Month G = Pb−Free Package (Note: Microdot may be in either location) PINOUT Q2(P) 4 3 5 2 6 1 Q1(N) ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet.
© Semiconductor Components Industries, LLC, 2001 1 March, 2022 − Rev.
5 Publication Order Number: FDC6333C/D FDC6333C ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.
) Ratings Symbol Parameter Q1 Q2 Unit VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current – Continuous (Note 1a) Drain Current – Pulsed 30 −30 V ±16 ±25 V 2.
5 −2.
0 A 8 −8 PD Power Dissipation for Single Operation (Note 1a) 0.
96 W (Note 1b) 0.
9 (Note 1c) 0.
7 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage th...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)