DatasheetsPDF.com

FDC6331L

Fairchild Semiconductor
Part Number FDC6331L
Manufacturer Fairchild Semiconductor
Description Integrated Load Switch
Published Mar 30, 2005
Detailed Description FDC6331L August 2001 FDC6331L Integrated Load Switch General Description This device is particularly suited for compac...
Datasheet PDF File FDC6331L PDF File

FDC6331L
FDC6331L

Overview
FDC6331L August 2001 FDC6331L Integrated Load Switch General Description This device is particularly suited for compact power management in portable electronic equipment where 2.
5V to 8V input and 2.
8A output current capability are needed.
This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P -Channel power MOSFET (Q2) in one tiny SuperSOTT M-6 package.
Applications • Load switch • Power management Features • –2.
8 A, –8 V.
RDS(ON) = 55 mΩ @ V GS = –4.
5 V RDS(ON) = 70 mΩ @ V GS = –2.
5 V RDS(ON) = 100 mΩ @ V GS = –1.
8 V • Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human body model) • High performance trench technology for extremely low RDS(ON) D2 S1 D1 Vin,R1 ON/OFF Q2 Equivalent Circuit 3 2 Q1 4 5 6 Vout,C1 IN Vout,C1 R2 + V – DROP OUT G2 SuperSOT Pin 1 TM -6 S2 G1 R1,C1 1 See Application Circuit ON/OFF SuperSOT™-6 Absolute Maximum Ratings Symbol V IN V ON/OFF ILoad PD TJ , TSTG TA=25oC unless otherwise noted Parameter Maximum Input Voltage High level ON/OFF voltage range Load Current – Continuous – Pulsed Maximum Power Dissipation (Note 1) (Note 1) Ratings ±8 –0.
5 to 8 –2.
8 –9 0.
7 –55 to +150 Units V V A W °C Operating and Storage Junction Temperature Range Thermal Characteristics Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) (Note 1) 180 60 °C/W °C/W Package Marking and Ordering Information Device Marking .
331 Device FDC6331L Reel Size 7’’ Tape width 8mm Quantity 3000 units © 2001 Fairchild Semiconductor Corporation FDC6331L Rev C(W) FDC6331L Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV IN ILoad IFL IRL Vin Breakdown Voltage Zero Gate Voltage Drain Current Leakage Current, Forward Leakage Current, Reverse (Note 2) V ON/OFF = 0 V, ID = –250 µA V IN = 6.
4 V, V ON/OFF = 0 V V ON/OFF = 0 V, V IN = 8 V V ON/OFF = 0 V, V IN = –8 V V ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)