DatasheetsPDF.com

FDC6333C

Fairchild Semiconductor
Part Number FDC6333C
Manufacturer Fairchild Semiconductor
Description 30V N & P-Channel PowerTrench MOSFETs
Published Mar 30, 2005
Detailed Description FDC6333C October 2001 FDC6333C 30V N & P-Channel PowerTrench® MOSFETs General Description These N & P-Channel MOSFETs ...
Datasheet PDF File FDC6333C PDF File

FDC6333C
FDC6333C

Overview
FDC6333C October 2001 FDC6333C 30V N & P-Channel PowerTrench® MOSFETs General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features • Q1 2.
5 A, 30V.
RDS(ON) = 95 mΩ @ VGS = 10 V RDS(ON) = 150 mΩ @ VGS = 4.
5 V • Q2 –2.
0 A, 30V.
RDS(ON) = 150 mΩ @ VGS = –10 V RDS(ON) = 220 mΩ @ VGS = –4.
5 V • Low gate charge • High performance trench technology for extremely low RDS(ON).
• SuperSOT –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).
Applications • DC/DC converter • Load switch • LCD display inverter D2 S1 D1 Q2(P) 4 G2 3 2 1 Q1(N) 5 6 SuperSOT Pin 1 TM -6 S2 G1 SuperSOT™-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Q1 30 ±16 (Note 1a) Q2 –30 ±25 –2.
0 –8 0.
96 0.
9 0.
7 –55 to +150 Units V V A 2.
5 8 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) W °C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 130 60 °C/W °C/W Package Marking and Ordering Information Device Marking .
333 Device FDC6333C Reel Size 7’’ Tape width 8mm Quantity 3000 units ©2001 Fairchild Semiconductor Corporation FDC6333C Rev C (W) FDC6333C Electrical Characteristics Symbol Parameter Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)