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FDC633N

Part Number FDC633N
Manufacturer Fairchild Semiconductor
Title N-Channel MOSFET
Description This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This...
Features 5.2 A, 30 V. RDS(ON) = 0.042 Ω @ VGS = 4.5 V RDS(ON) = 0.054 Ω @ VGS = 2.5 V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SOT-23...

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FDC6330L : This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (Q2) in one tiny SuperSOTTM-6 package. Features •V DROP DROP V = 0.2V @ V = 12V, I =2.5 A. R = 0.08 Ω IN L (ON) = 0.2V @ V = 5V,I = 1.6 A. R = 0.125 Ω. IN L (ON) • Control MOSFET (Q1) includes Zener protection for ESD ruggedness (6kV Human Body Model). • High performance PowerTrenchTM technology for extremely low on-resistance. • SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical c.

FDC6330L : This device is particularly suited for compact power management in portable electronic equipment where 3 V to 20 V input and 2.3 A output current capability are needed. This load switch integrates a small N−Channel power MOSFET (Q1) which drives a large P−Channel power MOSFET (Q2) in one tiny SUPERSOTt−6 package. Features • VDROP = 0.20 V @ VIN = 12 V, IL = 2.5 A, R(on) = 0.08 W • VDROP = 0.20 V @ VIN = 5 V, IL = 1.6 A, R(on) = 0.125 W • Control MOSFET (Q1) Includes Zener Protection for ESD Ruggedness ( 6 kV Human Body Model) • High Performance POWERTRENCH® Technology for Extremely Low On−Resistance • SUPERSOT−6 Package Design Using Copper Lead Frame for Superior Thermal and Electrical Capa.

FDC6331L : This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 2.8A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) that drives a large P -Channel power MOSFET (Q2) in one tiny SuperSOTT M-6 package. Applications • Load switch • Power management Features • –2.8 A, –8 V. RDS(ON) = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V • Control MOSFET (Q1) includes Zener protection for ESD ruggedness (6KV Human body model) • High performance trench technology for extremely low RDS(ON) D2 S1 D1 Vin,R1 ON/OFF Q2 Equivalent Circuit 3 2 Q1 4 5 6 .

FDC6331L : This device is particularly suited for compact power management in portable electronic equipment where 2.5 V to 8 V input and 2.8 A output current capability are needed. This load switch integrates a small N−Channel power MOSFET (Q1) that drives a large P−Channel power MOSFET (Q2) in one tiny SUPERSOTt−6 package. Features • −2.8 A, −8 V ♦ RDS(on) = 55 mW @ VGS = −4.5 V ♦ RDS(on) = 70 mW @ VGS = −2.5 V ♦ RDS(on) = 100 mW @ VGS = −1.8 V • Control MOSFET (Q1) Includes Zener Protection for ESD Ruggedness (6 kV Human Body Model) • High Performance Trench Technology for Extremely Low RDS(on) • This is a Pb−Free and Halide Free Device Applications • Load Switch • Power Management DATA SHEET www.o.

FDC6332L : This Load Switch integrates an N-Channel Power MOSFET that drives Common-Source P-Channels and TM in a small SuperSot –6 package. It uses Fairchild’s advanced low voltage PowerTrench process. The RDS(ON) is 750 mΩ per the switch @ VGS 1.8Vand is optimized for battery power management applications. Features • –1 A, 8 V. RDS(ON) = 350 mΩ @ VGS = –4.5 V RDS(ON) = 500 mΩ @ VGS = –2.5 V RDS(ON) = 750 mΩ @ VGS = –1.8 V • N-Channel MOSFET includes Zener protection for ESD ruggedness (6KV Human body model) • High performance trench technology for extremely low RDS(ON) Applications • Battery management/Charger Application • Accessory load switching S1 D1 D2 Vin 1 2 3 6 5 4 S1/S2 On/Off Vou.

FDC6333C : These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features • Q1 2.5 A, 30V. RDS(ON) = 95 mΩ @ VGS = 10 V RDS(ON) = 150 mΩ @ VGS = 4.5 V • Q2 –2.0 A, 30V. RDS(ON) = 150 mΩ @ VGS = –10 V RDS(ON) = 220 mΩ @ VGS = –4.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON). • SuperSOT –6 package: small footprint (72%.

FDC6333C : These N & P−Channel MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical. Features • Q1 2.5 A, 30 V ♦ RDS(on) = 95 mW @ VGS = 10 V ♦ RDS(on) = 150 mW @ VGS = 4.5 V • Q2 −2.0 A, −30 V ♦ RDS(on) = 130 mW @ VGS = −10 V ♦ RDS(on) = 220 mW @ VGS = −4.5 V • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOTt−6 Package: Small Footprint (72% Smaller t.




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