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FDC633N

Fairchild Semiconductor
Part Number FDC633N
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel enhancement mo...
Datasheet PDF File FDC633N PDF File

FDC633N
FDC633N

Overview
March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching,low in-line power loss and resistance to transients are needed in a very small outline surface mount package.
Features 5.
2 A, 30 V.
RDS(ON) = 0.
042 Ω @ VGS = 4.
5 V RDS(ON) = 0.
054 Ω @ VGS = 2.
5 V.
SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 .
63 3 2 5 G SuperSOT TM pin 1 D D 3 4 -6 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1a) FDC633N 30 ±8 5.
2 16 1.
6 0.
8 -55 to 150 Units V V A W TJ,TSTG RθJA RθJC Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 °C/W °C/W © 1998 Fairchild Semiconductor Corporation FDC633N Rev.
C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25 oC VDS = 24 V, VGS = 0 V TJ = 55 C IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 8 V, VDS = 0 V VG...


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