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FDC6332L

Fairchild Semiconductor
Part Number FDC6332L
Manufacturer Fairchild Semiconductor
Description Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDC6332L June 2003 FDC6332L Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFET General Description...
Datasheet PDF File FDC6332L PDF File

FDC6332L
FDC6332L

Overview
FDC6332L June 2003 FDC6332L Common Source Load Switch P-Channel 1.
8V Specified PowerTrench MOSFET General Description This Load Switch integrates an N-Channel Power MOSFET that drives Common-Source P-Channels and TM in a small SuperSot –6 package.
It uses Fairchild’s advanced low voltage PowerTrench process.
The RDS(ON) is 750 mΩ per the switch @ VGS 1.
8Vand is optimized for battery power management applications.
Features • –1 A, 8 V.
RDS(ON) = 350 mΩ @ VGS = –4.
5 V RDS(ON) = 500 mΩ @ VGS = –2.
5 V RDS(ON) = 750 mΩ @ VGS = –1.
8 V • N-Channel MOSFET includes Zener protection for ESD ruggedness (>6KV Human body model) • High performance trench technology for extremely low RDS(ON) Applications • Battery management/Charger Application • Accessory load switching S1 D1 D2 Vin 1 2 3 6 5 4 S1/S2 On/Off Vout GND IN V DROP OUT G2 SuperSOT Pin 1 TM -6 G1 S2 G1/G2 ON/OFF SuperSOT™-6 Equivalent Circuit TA=25oC unless otherwise noted Absolute Maximum Ratings Symbol VIN VON ILoad PD TJ, TSTG Input Voltage Turn-On Voltage Load Current – Continuous – Pulsed Maximum Power Dissipation Parameter Ratings ±8 8 (Note 1) Units V V A W °C –1.
0 –2.
0 0.
7 –55 to +150 (Note 1) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) (Note 1) 160 90 °C/W Package Marking and Ordering Information Device .
332 FDC6332L Reel Size 7’’ Tape width 8mm Quantity 3000 units 2003Fairchild Semiconductor Corporation FDC6332L Rev D(W) FDC6332L Electrical Characteristics Symbol Off Characteristics BVIN IRIN BVGOFF IGOFF Input – Output Breakdown Voltage Reverse Input Current TA = 25°C unless otherwise noted Parameter Test Conditions VON/OFF = 0 V, VIN = –8V, IG = 250uA VG = 8 V ID = –250 µA VON/OFF = 0 V Min –20 Typ Max Units V –1 µA V 100 nA Driver FET Gate Breakdown Voltage Driver FET Gate Leakage Current (Note 2) 8 On Characteristics VIN VON VOFF ILO...


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