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2SC5998

Part Number	2SC5998
Manufacturer	Renesas
Description	NPN Transistor
Published	Aug 7, 2020
Detailed Description	2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0101 Rev.1.01 Jan 27, 2006 Features • ...
Datasheet	2SC5998 PDF File

Overview

2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0101 Rev.
1.
01 Jan 27, 2006 Features • High Transition Frequency fT = 11 GHz typ.
• High gain and Excellent Efficiency Maximum Available Gain (MAG) = +22 dB typ.
at VCE = 3.
6 V, IC = 100 mA, f = 500 MHz Power Added Efficiency (PAE) = 70% typ.
at Pin = +16 dBm, f = 500 MHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for up to 2 GHz applications.
e.
g.
FRS(Family Radio Service) Power Amplifier , GMRS (General Mobile Radio Service) Driver Amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) Note: Marking is “YC-”.
3 1 2 1.
Collector 2.
Base 3.
Emitter Absolute Maximum Ratings It...

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