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BFG193

INCHANGE
Part Number BFG193
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 7, 2020
Detailed Description isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz ·High ...
Datasheet PDF File BFG193 PDF File

BFG193
BFG193

Overview
isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise Figure NF = 1.
3 dB TYP.
@VCE = 8 V, IC = 10 mA, f = 900 MHz ·High Gain ︱S21e︱2 = 13.
5 dB TYP.
@VCE= 8 V,IC = 30 mA,f = 900 MHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous 20 V 20 V 12 V 2 V 80 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 10 mA 0.
6 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BFG193 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor BFG193 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN ...


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