DatasheetsPDF.com

BUZ24

Part Number	BUZ24
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 18, 2020
Detailed Description	isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.06Ω(Max) ·SOA is Power Dissi...
Datasheet	BUZ24 PDF File

Overview

isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.
06Ω(Max) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=27℃ 32 A IDM Drain Current-Single Plused 128 A Ptot ...

Similar Datasheet

BUZ10 N-Channel Power MOSFET - STMicroelectronics
BUZ10 Power Transistor - Siemens Semiconductor Group
BUZ10 N-Channel MOSFET - INCHANGE
BUZ100 Power Transistor - Siemens Semiconductor Group
BUZ100 N-Channel MOSFET - INCHANGE
BUZ100L Power Transistor - Siemens Semiconductor Group
BUZ100S Power Transistor - Siemens Semiconductor Group
BUZ100SL Power Transistor - Siemens Semiconductor Group
BUZ100SL-4 Power Transistor - Siemens Semiconductor Group
BUZ101 Power Transistor - Siemens

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)