DatasheetsPDF.com

BUZ31

Part Number	BUZ31
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 18, 2020
Detailed Description	isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·High current capabi...
Datasheet	BUZ31 PDF File

Overview

isc N-Channel Mosfet Transistor ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 0.
2Ω(Max) ·High current capability ·150℃ operating temperature ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High current , high speed switching ·Solenoid and relay drivers ·DC-DC & DC-AC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ 14.
5 A IDM Drain Current-Single Plused 58 A Ptot Total Dissipation@TC=25℃ 95 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Tem...

Similar Datasheet

BUZ10 N-Channel Power MOSFET - STMicroelectronics
BUZ10 Power Transistor - Siemens Semiconductor Group
BUZ10 N-Channel MOSFET - INCHANGE
BUZ100 Power Transistor - Siemens Semiconductor Group
BUZ100 N-Channel MOSFET - INCHANGE
BUZ100L Power Transistor - Siemens Semiconductor Group
BUZ100S Power Transistor - Siemens Semiconductor Group
BUZ100SL Power Transistor - Siemens Semiconductor Group
BUZ100SL-4 Power Transistor - Siemens Semiconductor Group
BUZ101 Power Transistor - Siemens

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)