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AOD409G

INCHANGE
Part Number AOD409G
Manufacturer INCHANGE
Description P-Channel MOSFET
Published Nov 28, 2020
Detailed Description isc P-Channel MOSFET Transistor AOD409G ·FEATURES ·Drain Current –ID= -28A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V...
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AOD409G
AOD409G

Overview
isc P-Channel MOSFET Transistor AOD409G ·FEATURES ·Drain Current –ID= -28A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -28 A IDM Drain Current-Single Pulsed -80 A PD Total Dissipation @TC=25℃ 60 W Tj Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 2.
1 ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise s...


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