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AOD402

Alpha & Omega Semiconductors
Part Number AOD402
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Dec 20, 2006
Detailed Description www.DataSheet4U.com AOD402 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD402 uses advan...
Datasheet PDF File AOD402 PDF File

AOD402
AOD402

Overview
www.
DataSheet4U.
com AOD402 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD402 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.
This device is suitable for use in PWM, laod switching and general purpose applications.
Standard Product AOD402 is Pb-free (meets ROHS & Sony 259 specifications).
AOD402L is a Green Product ordering option.
AOD402 and AOD402L are electrically identical.
TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Features VDS (V) = 30V ID = 18 A (VGS = 20V) RDS(ON) < 15 mΩ (VGS = 20V) RDS(ON) < 18 mΩ (VGS = 10V) RDS(ON) < 44 mΩ (VGS = 4.
5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C Maximum 30 ±25 18 12 40 18 40 60 30 2.
5 1.
6 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy L=0.
1mH C Power Dissipation Power Dissipation B TC=100°C TA=25°C TA=70°C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16.
7 40 1.
9 Max 25 50 2.
5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AOD402 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±25V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=20V, ID=18A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=10V, ID=18A VGS=4.
5V, ID=6A gFS VSD IS Forward Transconductance VDS=5V, ID=18A IS=18A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 1 40 12 17.
4 15 36 24 0.
8 1 18 769 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 185 131 0.
7 15.
9 VGS=10V, VDS=10V, ID=18A 2.
44 4.
92 6.
2 VGS=10V, VDS=15V, ID=18A, RL=0.
82Ω, RGEN=3Ω IF=18A, dI/dt=1...


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