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AOD408

Alpha & Omega Semiconductors
Part Number AOD408
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Dec 20, 2006
Detailed Description www.DataSheet4U.com AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD408 uses advan...
Datasheet PDF File AOD408 PDF File

AOD408
AOD408

Overview
www.
DataSheet4U.
com AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Standard Product AOD408 is Pbfree (meets ROHS & Sony 259 specifications).
AOD408L is a Green Product ordering option.
AOD408 and AOD408L are electrically identical.
Features VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 18mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.
5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS 30 Drain-Source Voltage VGS ±20 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.
1mH TC=25°C Power Dissipation Power Dissipation B C Units V V A A mJ W W °C TC=25°C TC=100°C C 18 ID IDM IAR EAR PD PDSM TJ, TSTG 18 40 18 40 60 30 2.
5 1.
6 -55 to 175 TC=100°C TA=25°C TA=70°C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Case B Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16.
7 40 1.
9 Max 25 50 2.
5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AOD408 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.
5V, ID=10A Forward Transconductance VDS=5V, ID=18A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250 µA, VGS=0V VDS=24V, V GS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250 µA VGS=4.
5V, VDS=5V VGS=10V, ID=18A TJ=125°C 1 40 13.
6 18 20.
6 25 0.
75 1 18 1040 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 180...


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