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AOD405

Alpha & Omega Semiconductors
Part Number AOD405
Manufacturer Alpha & Omega Semiconductors
Description P-Channel MOSFET
Published Dec 20, 2006
Detailed Description www.DataSheet4U.com Rev 3: Sept 2004 AOD405, AOD405L (Green Product) P-Channel Enhancement Mode Field Effect Transisto...
Datasheet PDF File AOD405 PDF File

AOD405
AOD405


Overview
www.
DataSheet4U.
com Rev 3: Sept 2004 AOD405, AOD405L (Green Product) P-Channel Enhancement Mode Field Effect Transistor General Description The AOD405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.
With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications.
AOD405L (Green Product) is offered in a lead-free package.
Features VDS (V) = -30V ID = -18A RDS(ON) < 32mΩ (VGS = -10V) RDS(ON) < 60mΩ (VGS = -4.
5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.
1mH TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C C Maximum -30 ±20 -18 -18 -40 -18 40 60 30 2.
5 1.
6 -55 to 175 Units V V A A mJ W W °C TA=25°C G TA=100°C G ID IDM IAR EAR PD PDSM TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 16.
7 40 1.
9 Max 25 50 2.
5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AOD405, AOD405L Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.
5V, ID=-10A Forward Transconductance VDS=-5V, ID=-18A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-18A TJ=125°C -1.
2 -40 24.
5 36 41 17 -0.
76 -1 -18 920 VGS=0V, VDS=-15V, ...



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