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AOD406

Alpha & Omega Semiconductors
Part Number AOD406
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Dec 20, 2006
Detailed Description www.DataSheet4U.com AOD406 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD406 uses advan...
Datasheet PDF File AOD406 PDF File

AOD406
AOD406

Overview
www.
DataSheet4U.
com AOD406 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD406 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics.
This device is ideally suited for use as a low side switch in CPU core power conversion.
Standard Product AOD406 is Pb-free (meets ROHS & Sony 259 specifications).
AOD406L is a Green Product ordering option.
AOD406 and AOD406L are electrically identical.
Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 5.
0mΩ (VGS = 10V) RDS(ON) < 5.
7mΩ (VGS = 4.
5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.
1mH TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient Maximum Junction-to-Lead C C Maximum 30 ±12 85 75 200 30 140 100 50 2.
5 1.
6 -55 to 175 Units V V A A mJ W W °C TC=25°C G TC=100°C B ID IDM IAR EAR PD PDSM TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 14.
2 40 0.
56 Max 20 50 1.
5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AOD406 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, ID=20A TJ=125°C 0.
8 100 4 5.
8 4.
6 102 0.
64 5 ...


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