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AOD404

Alpha & Omega Semiconductors
Part Number AOD404
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Dec 20, 2006
Detailed Description www.DataSheet4U.com AOD404 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD404 uses advan...
Datasheet PDF File AOD404 PDF File

AOD404
AOD404

Overview
www.
DataSheet4U.
com AOD404 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD404 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance.
This device is ideally suited for use as a high side switch in CPU core power conversion.
Standard Product AOD404 is Pb-free (meets ROHS & Sony 259 specifications).
AOD404L is a Green Product ordering option.
AOD404 and AOD404L are electrically identical.
TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7mΩ (VGS = 10V) RDS(ON) < 8mΩ (VGS = 4.
5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.
1mH TC=25°C Power Dissipation B Power Dissipation A C Maximum 30 ±12 85 65 200 30 120 100 50 2.
5 1.
6 -55 to 175 Units V V A A mJ W W °C TC=25°C G TC=100°C B ID IDM IAR EAR PD PDSM TJ, TSTG TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 14.
2 39 0.
8 Max 20 50 1.
5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AOD404 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125°C 1 85 5.
4 8.
4 6.
6 90 0.
74 1 85 2100 VGS=0V, VDS=1...


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