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FDG6306P

ON Semiconductor
Part Number FDG6306P
Manufacturer ON Semiconductor
Description P-Channel MOSFET
Published Jul 3, 2022
Detailed Description FDG6306P www.onsemi.com FDG6306P P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V...
Datasheet PDF File FDG6306P PDF File

FDG6306P
FDG6306P

Overview
FDG6306P www.
onsemi.
com FDG6306P P-Channel 2.
5V Specified PowerTrench® MOSFET General Description This P-Channel 2.
5V specified MOSFET is a rugged gate version of ON Semiconductor’s advanced PowerTrench process.
It has been optimized for power management applications with a wide range of gate drive voltage (2.
5V – 12V).
Applications • Battery management • Load switch Features • –0.
6 A, –20 V.
RDS(ON) = 420 mΩ @ VGS = –4.
5 V RDS(ON) = 630 mΩ @ VGS = –2.
5 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package S G D S 1 or 4 Pin 1 D G S G 2 or 5 D 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
6 or 3 D 5 or 2 G 4 or 1 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS V GSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1) – Pulsed Power Dissipation for Single Operation (Note 1) O...


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