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FDG6303N

Fairchild Semiconductor
Part Number FDG6303N
Manufacturer Fairchild Semiconductor
Description Dual N-Channel Digital FET
Published Mar 30, 2005
Detailed Description July 1999 FDG6303N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode fi...
Datasheet PDF File FDG6303N PDF File

FDG6303N
FDG6303N

Overview
July 1999 FDG6303N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features 25 V, 0.
50 A continuous, 1.
5 A peak.
RDS(ON) = 0.
45 Ω @ VGS= 4.
5 V, RDS(ON) =0.
60 Ω @ VGS= 2.
7 V.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.
5 V).
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
Compact industry standard SC70-6 surface mount package.
SC70-6 SOT-23 SuperSOTTM -6 SuperSOTTM -8 SO-8 SOT-223 D1 G2 S2 1 or 4 * 6 or 3 .
03 2 or 5 5 or 2 SC70-6 S1 G1 D2 3 or 6 4 or 1 * * The pinouts are symmetrical; pin 1 and 4 are interchangeable.
Units ...


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