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FDG6302P

Fairchild Semiconductor
Part Number FDG6302P
Manufacturer Fairchild Semiconductor
Description Dual P-Channel/ Digital FET
Published Mar 30, 2005
Detailed Description July 1999 FDG6302P Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode fi...
Datasheet PDF File FDG6302P PDF File

FDG6302P
FDG6302P

Overview
July 1999 FDG6302P Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features -25 V, -0.
14 A continuous, -0.
4 A peak.
RDS(ON) = 10 Ω @ VGS= -4.
5 V, RDS(ON) = 13 Ω @ VGS= -2.
7 V.
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.
5 V).
Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
Compact industry standard SC70-6 surface mount package.
SC70-6 SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 D1 G2 S2 .
02 G1 D2 1 or 4 * 6 or 3 2 or 5 5 or 2 .
SC70-6 S1 3 or 6 4 or 1 * *The pinouts are symmetrical; pin 1 and 4 are interchangeable.
Uni...


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