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FDG6304P

ON Semiconductor
Part Number FDG6304P
Manufacturer ON Semiconductor
Description Dual P-Channel Digital FET
Published Dec 24, 2023
Detailed Description Digital FET, Dual P-Channel FDG6304P General Description These dual P−Channel logic level enhancement mode field effec...
Datasheet PDF File FDG6304P PDF File

FDG6304P
FDG6304P

Overview
Digital FET, Dual P-Channel FDG6304P General Description These dual P−Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on−state resistance.
This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.
Features • −25 V, −0.
41 A Continuous, −1.
5 A Peak ♦ RDS(ON) = 1.
1 W @ VGS = −4.
5 V ♦ RDS(ON) = 1.
5 W @ VGS = −2.
7 V • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.
5 V) • Gate−Source Zener for ESD Ruggedness (>6 kV Human Body Model) • Compact Industry Standard SC70−6 Surface Mount Package • These Devices are Pb−Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter FDG6304P Units VDSS Drain−Source Voltage −25 V VGSS Gate−Source Voltage −8...


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